IPP60R250CPXK
- Mfr.Part #
- IPP60R250CPXK
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- N-CHANNEL POWER MOSFET
- Stock
- 48,192
- In Stock :
- 48,192
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain-source On Resistance-Max :
- 0.25Ohm
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 3.5V @ 440µA
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- JEDEC-95 Code :
- TO-220AB
- Pulsed Drain Current-Max (IDM) :
- 40A
- Turn On Delay Time :
- 40 ns
- FET Type :
- N-Channel
- Halogen Free :
- Halogen Free
- Series :
- CoolMOS™
- Fall Time (Typ) :
- 12 ns
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Position :
- Single
- Rise Time :
- 17ns
- Drain to Source Voltage (Vdss) :
- 650V
- Pbfree Code :
- yes
- Input Capacitance (Ciss) (Max) @ Vds :
- 1200pF @ 100V
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 35nC @ 10V
- Package / Case :
- TO-220-3
- Turn-Off Delay Time :
- 110 ns
- RoHS Status :
- ROHS3 Compliant
- Qualification Status :
- Not Qualified
- Rds On (Max) @ Id, Vgs :
- 250m Ω @ 7.8A, 10V
- Power Dissipation-Max :
- 104W Tc
- Transistor Application :
- SWITCHING
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Power Dissipation :
- 104W
- Number of Pins :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Finish :
- Tin (Sn)
- ECCN Code :
- EAR99
- Max Dual Supply Voltage :
- 600V
- Continuous Drain Current (ID) :
- 12A
- Packaging :
- Tube
- Factory Lead Time :
- 16 Weeks
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- Published :
- 2008
- Datasheets
- IPP60R250CPXK

N-Channel Tube 250m Ω @ 7.8A, 10V ±20V 1200pF @ 100V 35nC @ 10V 650V TO-220-3
IPP60R250CPXKSA1 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1200pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 12A amps.It is [110 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 40A.A turn-on delay time of 40 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.As it is powered by 600V, it can support the maximum dual supply voltage.To operate this transistor, you will need a 650V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IPP60R250CPXKSA1 Features
a continuous drain current (ID) of 12A
the turn-off delay time is 110 ns
based on its rated peak drain current 40A.
a 650V drain to source voltage (Vdss)
IPP60R250CPXKSA1 Applications
There are a lot of Infineon Technologies
IPP60R250CPXKSA1 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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