IPP60R230P6XKSA1
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- Mfr.Part #
- IPP60R230P6XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 16.8A TO220-3
- Stock
- 33,208
- In Stock ：
- 33,208
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Halogen Free :
- Halogen Free
- Package / Case :
- TO-220-3
- Series :
- CoolMOS™ P6
- Drain to Source Resistance :
- 207mOhm
- Continuous Drain Current (ID) :
- 16.8A
- Vgs (Max) :
- ±20V
- Fall Time (Typ) :
- 6 ns
- Turn On Delay Time :
- 12 ns
- Input Capacitance :
- 1.45nF
- Gate Charge (Qg) (Max) @ Vgs :
- 31nC @ 10V
- Factory Lead Time :
- 12 Weeks
- FET Type :
- N-Channel
- RoHS Status :
- RoHS Compliant
- Turn-Off Delay Time :
- 38 ns
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 4.5V @ 530μA
- Packaging :
- Tube
- Published :
- 2008
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Rds On Max :
- 230 mΩ
- Gate to Source Voltage (Vgs) :
- 20V
- Supplier Device Package :
- PG-TO220-3
- Max Dual Supply Voltage :
- 600V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1450pF @ 100V
- Current - Continuous Drain (Id) @ 25°C :
- 16.8A Tc
- Mounting Type :
- Through Hole
- Rise Time :
- 7ns
- Rds On (Max) @ Id, Vgs :
- 230mOhm @ 6.4A, 10V
- Mount :
- Through Hole
- Min Operating Temperature :
- -55°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Voltage (Vdss) :
- 600V
- Max Operating Temperature :
- 150°C
- Number of Pins :
- 3
- Power Dissipation-Max :
- 126W Tc
- Datasheets
- IPP60R230P6XKSA1
N-Channel Tube 230mOhm @ 6.4A, 10V ±20V 1450pF @ 100V 31nC @ 10V 600V TO-220-3
IPP60R230P6XKSA1 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1450pF @ 100V.This device conducts a continuous drain current (ID) of 16.8A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 38 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 207mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 12 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.With 600V power, it supports a dual voltage supply of up to maximum.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IPP60R230P6XKSA1 Features
a continuous drain current (ID) of 16.8A
the turn-off delay time is 38 ns
single MOSFETs transistor is 207mOhm
a 600V drain to source voltage (Vdss)
IPP60R230P6XKSA1 Applications
There are a lot of Infineon Technologies
IPP60R230P6XKSA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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