IPP60R190E6XKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

1400pF @ 100V

JEDEC-95 Code :

TO-220AB

Drain to Source Voltage (Vdss) :

600V

Package / Case :

TO-220-3

Avalanche Energy Rating (Eas) :

418 mJ

Current - Continuous Drain (Id) @ 25°C :

20.2A Tc

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

Transistor Application :

SWITCHING

Number of Terminations :

3

Terminal Finish :

Tin (Sn)

Mounting Type :

Through Hole

Terminal Position :

Single

Packaging :

Tube

Vgs (Max) :

±20V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

CoolMOS™

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

DS Breakdown Voltage-Min :

600V

Power Dissipation-Max :

151W Tc

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Published :

2008

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

3.5V @ 630μA

Drain-source On Resistance-Max :

0.19Ohm

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Rds On (Max) @ Id, Vgs :

190m Ω @ 9.5A, 10V

Surface Mount :

No

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

59A

FET Type :

N-Channel

JESD-609 Code :

e3