IPP60R125CPXKSA1
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- Mfr.Part #
- IPP60R125CPXKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 25A TO220-3
- Stock
- 47,059
- In Stock ：
- 47,059
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-609 Code :
- e3
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 208W
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JEDEC-95 Code :
- TO-220AB
- Series :
- CoolMOS™
- Package / Case :
- TO-220-3
- Published :
- 2007
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Qualification Status :
- Not Qualified
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin (Sn)
- Halogen Free :
- Halogen Free
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 125m Ω @ 16A, 10V
- Max Dual Supply Voltage :
- 600V
- Turn-Off Delay Time :
- 50 ns
- Mount :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 650V
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Rated DC :
- 600V
- Avalanche Energy Rating (Eas) :
- 708 mJ
- Turn On Delay Time :
- 15 ns
- Vgs(th) (Max) @ Id :
- 3.5V @ 1.1mA
- Input Capacitance (Ciss) (Max) @ Vds :
- 2500pF @ 100V
- Gate Charge (Qg) (Max) @ Vgs :
- 70nC @ 10V
- Power Dissipation-Max :
- 208W Tc
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 12 Weeks
- Current - Continuous Drain (Id) @ 25°C :
- 25A Tc
- Pbfree Code :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 25A
- Rise Time :
- 5ns
- Vgs (Max) :
- ±20V
- Pulsed Drain Current-Max (IDM) :
- 82A
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- FET Type :
- N-Channel
- Terminal Position :
- Single
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 25A
- Datasheets
- IPP60R125CPXKSA1
N-Channel Tube 125m Ω @ 16A, 10V ±20V 2500pF @ 100V 70nC @ 10V 650V TO-220-3
IPP60R125CPXKSA1 Overview
There is a phenomenon known as "avalanche break down", where avalanche energy is applied to the MOSFET and avalanche energy rating (Eas) is 708 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 2500pF @ 100V.This device has a continuous drain current (ID) of [25A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 50 ns.A maximum pulsed drain current of 82A is the maximum peak drain current rated for this device.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 15 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Single MOSFETs transistor supports the maximum dual supply voltage when powered by 600V.In order to operate this transistor, a voltage of 650V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IPP60R125CPXKSA1 Features
the avalanche energy rating (Eas) is 708 mJ
a continuous drain current (ID) of 25A
the turn-off delay time is 50 ns
based on its rated peak drain current 82A.
a 650V drain to source voltage (Vdss)
IPP60R125CPXKSA1 Applications
There are a lot of Infineon Technologies
IPP60R125CPXKSA1 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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