IPP45P03P4L11AKSA1
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- Mfr.Part #
- IPP45P03P4L11AKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 45A TO220-3
- Stock
- 4,138
- In Stock ：
- 4,138
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Max Dual Supply Voltage :
- -30V
- Rds On (Max) @ Id, Vgs :
- 11.1m Ω @ 45A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Avalanche Energy Rating (Eas) :
- 110 mJ
- JESD-609 Code :
- e3
- Drain-source On Resistance-Max :
- 0.0111Ohm
- Mount :
- Through Hole
- Published :
- 2008
- Number of Terminations :
- 3
- Turn On Delay Time :
- 7 ns
- Rise Time :
- 3ns
- JEDEC-95 Code :
- TO-220AB
- FET Type :
- P-Channel
- ECCN Code :
- EAR99
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Vgs(th) (Max) @ Id :
- 2V @ 85µA
- Fall Time (Typ) :
- 14 ns
- Packaging :
- Tube
- Number of Pins :
- 3
- Vgs (Max) :
- +5V, -16V
- Halogen Free :
- Halogen Free
- Terminal Finish :
- Tin (Sn)
- Pulsed Drain Current-Max (IDM) :
- 180A
- Operating Temperature :
- -55°C~175°C TJ
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Drain to Source Voltage (Vdss) :
- 30V
- RoHS Status :
- RoHS Compliant
- Package / Case :
- TO-220-3
- Continuous Drain Current (ID) :
- 45A
- Gate to Source Voltage (Vgs) :
- 5V
- Input Capacitance (Ciss) (Max) @ Vds :
- 3770pF @ 25V
- Mounting Type :
- Through Hole
- Turn-Off Delay Time :
- 45 ns
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 55nC @ 10V
- Power Dissipation-Max :
- 58W Tc
- Series :
- OptiMOS™
- Transistor Element Material :
- SILICON
- Terminal Position :
- Single
- Lead Free :
- Contains Lead
- Current - Continuous Drain (Id) @ 25°C :
- 45A Tc
- Factory Lead Time :
- 14 Weeks
- Datasheets
- IPP45P03P4L11AKSA1
P-Channel Tube 11.1m Ω @ 45A, 10V +5V, -16V 3770pF @ 25V 55nC @ 10V 30V TO-220-3
IPP45P03P4L11AKSA1 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 110 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 3770pF @ 25V.This device conducts a continuous drain current (ID) of 45A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 45 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 180A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 7 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 5V.With -30V power, it supports a dual voltage supply of up to maximum.This transistor requires a drain-source voltage (Vdss) of 30V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
IPP45P03P4L11AKSA1 Features
the avalanche energy rating (Eas) is 110 mJ
a continuous drain current (ID) of 45A
the turn-off delay time is 45 ns
based on its rated peak drain current 180A.
a 30V drain to source voltage (Vdss)
IPP45P03P4L11AKSA1 Applications
There are a lot of Infineon Technologies
IPP45P03P4L11AKSA1 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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