IPP45N06S409AKSA2

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Terminal Position :

Single

JESD-30 Code :

R-PSFM-T3

Rds On (Max) @ Id, Vgs :

9.4m Ω @ 45A, 10V

Drain Current-Max (Abs) (ID) :

45A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain-source On Resistance-Max :

0.0094Ohm

Transistor Element Material :

SILICON

Factory Lead Time :

14 Weeks

Pulsed Drain Current-Max (IDM) :

180A

DS Breakdown Voltage-Min :

60V

JEDEC-95 Code :

TO-220AB

Reach Compliance Code :

not_compliant

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tube

Pbfree Code :

yes

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Mounting Type :

Through Hole

Series :

Automotive, AEC-Q101, OptiMOS™

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 34µA

Drain to Source Voltage (Vdss) :

60V

Avalanche Energy Rating (Eas) :

97 mJ

Package / Case :

TO-220-3

Current - Continuous Drain (Id) @ 25°C :

45A Tc

Power Dissipation-Max :

71W Tc

Surface Mount :

No

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Finish :

Tin (Sn)

Published :

2006

Input Capacitance (Ciss) (Max) @ Vds :

3785pF @ 25V