IPP45N06S4L08AKSA2
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- Mfr.Part #
- IPP45N06S4L08AKSA2
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 45A TO220-3
- Stock
- 7,665
- In Stock ：
- 7,665
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~175°C TJ
- Turn-Off Delay Time :
- 45 ns
- Pulsed Drain Current-Max (IDM) :
- 180A
- Avalanche Energy Rating (Eas) :
- 97 mJ
- Power Dissipation-Max :
- 71W Tc
- Mount :
- Through Hole
- Height :
- 15.65mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Drain-source On Resistance-Max :
- 0.0079Ohm
- Vgs (Max) :
- ±16V
- JEDEC-95 Code :
- TO-220AB
- Mounting Type :
- Through Hole
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Elements :
- 1
- Series :
- Automotive, AEC-Q101, OptiMOS™
- Current - Continuous Drain (Id) @ 25°C :
- 45A Tc
- Continuous Drain Current (ID) :
- 45A
- Factory Lead Time :
- 14 Weeks
- Fall Time (Typ) :
- 8 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 4780pF @ 25V
- Terminal Finish :
- Tin (Sn)
- Number of Terminations :
- 3
- Case Connection :
- DRAIN
- FET Type :
- N-Channel
- Published :
- 2009
- Rise Time :
- 2ns
- Transistor Element Material :
- SILICON
- Packaging :
- Tube
- Package / Case :
- TO-220-3
- Gate to Source Voltage (Vgs) :
- 16V
- Element Configuration :
- Single
- Gate Charge (Qg) (Max) @ Vgs :
- 64nC @ 10V
- Number of Pins :
- 3
- Reach Compliance Code :
- not_compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 9 ns
- JESD-609 Code :
- e3
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 2.2V @ 35μA
- Halogen Free :
- Halogen Free
- Max Dual Supply Voltage :
- 60V
- Width :
- 4.4mm
- Length :
- 10mm
- Rds On (Max) @ Id, Vgs :
- 8.2m Ω @ 45A, 10V
- Datasheets
- IPP45N06S4L08AKSA2
N-Channel Tube 8.2m Ω @ 45A, 10V ±16V 4780pF @ 25V 64nC @ 10V TO-220-3
IPP45N06S4L08AKSA2 Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 97 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 4780pF @ 25V.This device conducts a continuous drain current (ID) of 45A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 45 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 180A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 9 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 16V.With 60V power, it supports a dual voltage supply of up to maximum.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
IPP45N06S4L08AKSA2 Features
the avalanche energy rating (Eas) is 97 mJ
a continuous drain current (ID) of 45A
the turn-off delay time is 45 ns
based on its rated peak drain current 180A.
IPP45N06S4L08AKSA2 Applications
There are a lot of Infineon Technologies
IPP45N06S4L08AKSA2 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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