IPP45N06S409AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

47nC @ 10V

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.0094Ohm

Power Dissipation-Max :

71W Tc

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

3785pF @ 25V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

9.4m Ω @ 45A, 10V

Max Dual Supply Voltage :

60V

Rise Time :

40ns

Pulsed Drain Current-Max (IDM) :

180A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

4V @ 34µA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

45A Tc

Turn-Off Delay Time :

20 ns

Number of Terminations :

3

Continuous Drain Current (ID) :

45A

Package / Case :

TO-220-3

Turn On Delay Time :

15 ns

JEDEC-95 Code :

TO-220AB

Terminal Position :

Single

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

97 mJ

Series :

OptiMOS™

Fall Time (Typ) :

5 ns

Mount :

Through Hole

Published :

2006