IPP09N03LA

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

25V

Terminal Finish :

MATTE TIN

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

FET Type :

N-Channel

Number of Terminations :

3

Packaging :

Tube

Current Rating :

50A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

88.5ns

Series :

OptiMOS™

Drain to Source Breakdown Voltage :

25V

Package / Case :

TO-220-3

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Additional Feature :

LOGIC LEVEL COMPATIBLE

Rds On (Max) @ Id, Vgs :

9.2m Ω @ 30A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

65A

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 5V

Gate to Source Voltage (Vgs) :

20V

Vgs(th) (Max) @ Id :

2V @ 20μA

Transistor Application :

SWITCHING

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

63W Tc

JESD-30 Code :

R-PSFM-T3

ECCN Code :

EAR99

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1642pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

75 mJ

Transistor Element Material :

SILICON

Fall Time (Typ) :

4.2 ns

RoHS Status :

Non-RoHS Compliant

Continuous Drain Current (ID) :

50A

Drain-source On Resistance-Max :

0.0155Ohm

JEDEC-95 Code :

TO-220AB

JESD-609 Code :

e3

Mount :

Through Hole

Pin Count :

3

Turn-Off Delay Time :

22 ns

Qualification Status :

Not Qualified

Vgs (Max) :

±20V

Power Dissipation :

63W

Published :

2003