IPP015N04NGXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

20000pF @ 20V

FET Type :

N-Channel

Transistor Element Material :

SILICON

Pbfree Code :

yes

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

400A

Gate Charge (Qg) (Max) @ Vgs :

250nC @ 10V

Drain to Source Voltage (Vdss) :

40V

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

1.5m Ω @ 100A, 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

40V

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Surface Mount :

No

Published :

2008

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Package / Case :

TO-220-3

Drain Current-Max (Abs) (ID) :

120A

Terminal Position :

Single

Power Dissipation-Max :

250W Tc

Qualification Status :

Not Qualified

Pin Count :

3

Number of Elements :

1

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PSFM-T3

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

865 mJ

Series :

OptiMOS™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Factory Lead Time :

13 Weeks

Drain-source On Resistance-Max :

0.0015Ohm

Mounting Type :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 200μA

Operating Mode :

ENHANCEMENT MODE

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Tin (Sn)