IPP019N08NF2SAKMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package :

Tube

Maximum Operating Temperature :

+ 175 C

Product Status :

Active

Base Product Number :

IPP019N

Vgs(th) (Max) @ Id :

3.8V @ 194μA

Mounting Style :

Through Hole

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

186 nC @ 10 V

Channel Type :

N

Package Type :

TO-220

Number of Channels :

1 Channel

Rds On (Max) @ Id, Vgs :

1.9mOhm @ 100A, 10V

Supplier Device Package :

PG-TO220-3

FET Feature :

-

Transistor Polarity :

N-Channel

Packaging :

Tube

Manufacturer :

Infineon

Power Dissipation (Max) :

3.8W (Ta), 250W (Tc)

FET Type :

N-Channel

Mounting Type :

Through Hole

Number of Elements per Chip :

1

Channel Mode :

Enhancement

Package / Case :

TO-220-3

Input Capacitance (Ciss) (Max) @ Vds :

8700 pF @ 40 V

Qualification :

-

Operating Temperature :

-55°C ~ 175°C (TJ)

Product Type :

MOSFET

Current - Continuous Drain (Id) @ 25°C :

32A (Ta), 191A (Tc)

Pin Count :

3

Power Dissipation :

250

Continuous Drain Current Id :

191

Brand :

Infineon Technologies

Series :

StrongIRFET? 2

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V

Drain to Source Voltage (Vdss) :

80 V

Minimum Operating Temperature :

- 55 C

Subcategory :

MOSFETs

Product Category :

MOSFET