IPP020N08N5AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Rise Time :

36ns

ECCN Code :

EAR99

Halogen Free :

Halogen Free

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

80V

Number of Terminations :

3

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Fall Time (Typ) :

37 ns

Published :

2013

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Terminal Finish :

Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

120A

Package / Case :

TO-220-3

Turn On Delay Time :

40 ns

Gate to Source Voltage (Vgs) :

20V

Max Dual Supply Voltage :

80V

Input Capacitance (Ciss) (Max) @ Vds :

16900pF @ 40V

Factory Lead Time :

13 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mounting Type :

Through Hole

FET Type :

N-Channel

Weight :

6.000006g

Transistor Application :

SWITCHING

Number of Elements :

1

Rds On (Max) @ Id, Vgs :

2m Ω @ 100A, 10V

Element Configuration :

Single

Transistor Element Material :

SILICON

Lead Free :

Contains Lead

Turn-Off Delay Time :

102 ns

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

OptiMOS™

Vgs(th) (Max) @ Id :

3.8V @ 280μA

JESD-609 Code :

e3

Number of Pins :

3

JEDEC-95 Code :

TO-220AB

Reach Compliance Code :

not_compliant

Pulsed Drain Current-Max (IDM) :

480A

Power Dissipation-Max :

375W Tc

Gate Charge (Qg) (Max) @ Vgs :

223nC @ 10V

Drain-source On Resistance-Max :

0.002Ohm

Operating Temperature :

-55°C~175°C TJ

Number of Channels :

1

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE