IPP096N03L G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

245A

Pbfree Code :

yes

FET Type :

N-Channel

Terminal Position :

Single

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

40 mJ

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Series :

OptiMOS™

Peak Reflow Temperature (Cel) :

260

Input Capacitance (Ciss) (Max) @ Vds :

1600pF @ 15V

Number of Elements :

1

Reach Compliance Code :

Compliant

Vgs (Max) :

±20V

Package / Case :

TO-220-3

JESD-30 Code :

R-PSFM-T3

Terminal Finish :

MATTE TIN

Drain-source On Resistance-Max :

0.0141Ohm

Number of Terminations :

3

Transistor Element Material :

SILICON

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

JEDEC-95 Code :

TO-220AB

Published :

2007

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

30V

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Surface Mount :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain to Source Voltage (Vdss) :

30V

ECCN Code :

EAR99

Packaging :

Tube

Pin Count :

3

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Rds On (Max) @ Id, Vgs :

9.6m Ω @ 30A, 10V

Current - Continuous Drain (Id) @ 25°C :

35A Tc

Power Dissipation-Max :

42W Tc

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

35A