IPP08CNE8NG

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

JESD-609 Code :

e3

Pin Count :

3

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

6690pF @ 40V

Power Dissipation-Max :

167W Tc

Rds On (Max) @ Id, Vgs :

6.4m Ω @ 95A, 10V

Series :

OptiMOS™

Operating Temperature :

-55°C~175°C TJ

FET Type :

N-Channel

Drain Current-Max (Abs) (ID) :

95A

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

95A Tc

Drain to Source Voltage (Vdss) :

85V

Surface Mount :

No

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Published :

2008

Pulsed Drain Current-Max (IDM) :

380A

Configuration :

SINGLE WITH BUILT-IN DIODE

Avalanche Energy Rating (Eas) :

262 mJ

Mounting Type :

Through Hole

Reach Compliance Code :

Compliant

Vgs(th) (Max) @ Id :

4V @ 130µA

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Gate Charge (Qg) (Max) @ Vgs :

99nC @ 10V

Packaging :

Tube

JESD-30 Code :

R-PSFM-T3

Number of Elements :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

85V

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

JEDEC-95 Code :

TO-220AB

Terminal Finish :

MATTE TIN

ECCN Code :

EAR99

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single