IPP086N10N3

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Terminations :

3

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

3980pF @ 50V

Pulsed Drain Current-Max (IDM) :

320A

Transistor Element Material :

SILICON

Halogen Free :

Halogen Free

Lead Free :

Lead Free

Vgs (Max) :

±20V

Number of Elements :

1

Rise Time :

42ns

Current - Continuous Drain (Id) @ 25°C :

80A Tc

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

55nC @ 10V

Fall Time (Typ) :

8 ns

JEDEC-95 Code :

TO-220AB

Mount :

Through Hole

Max Dual Supply Voltage :

100V

Drain-source On Resistance-Max :

0.0086Ohm

Series :

OptiMOS™

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Mounting Type :

Through Hole

FET Type :

N-Channel

Power Dissipation-Max :

125W Tc

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Factory Lead Time :

13 Weeks

Turn-Off Delay Time :

31 ns

Gate to Source Voltage (Vgs) :

20V

Power Dissipation :

125W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Continuous Drain Current (ID) :

80A

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3.5V @ 75μA

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Turn On Delay Time :

18 ns

Operating Temperature :

-55°C~175°C TJ

Pbfree Code :

yes

Pin Count :

3

Packaging :

Tube

Rds On (Max) @ Id, Vgs :

8.6m Ω @ 73A, 10V

JESD-30 Code :

R-PSFM-T3

Published :

2008