IPP084N06L3GXK

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.2V @ 34μA

Published :

2008

Power Dissipation-Max :

79W Tc

Number of Elements :

1

Number of Pins :

3

DS Breakdown Voltage-Min :

60V

FET Type :

N-Channel

Fall Time (Typ) :

7 ns

Pulsed Drain Current-Max (IDM) :

200A

Drain-source On Resistance-Max :

0.0084Ohm

Turn On Delay Time :

15 ns

RoHS Status :

ROHS3 Compliant

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Package / Case :

TO-220-3

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

60V

Input Capacitance (Ciss) (Max) @ Vds :

4900pF @ 30V

Number of Terminations :

3

Power Dissipation :

79W

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

50A

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

29nC @ 4.5V

Series :

OptiMOS™

Rds On (Max) @ Id, Vgs :

8.4m Ω @ 50A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rise Time :

26ns

Packaging :

Tube

Factory Lead Time :

13 Weeks

Vgs (Max) :

±20V

Turn-Off Delay Time :

37 ns

Terminal Position :

Single

Additional Feature :

LOGIC LEVEL COMPATIBLE

Mounting Type :

Through Hole