IPP080N06N G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-220-3

DS Breakdown Voltage-Min :

60V

Number of Terminations :

3

Pin Count :

3

Reach Compliance Code :

Compliant

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.008Ohm

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

80A Tc

RoHS Status :

RoHS Compliant

Pulsed Drain Current-Max (IDM) :

320A

Terminal Finish :

MATTE TIN

Rds On (Max) @ Id, Vgs :

8m Ω @ 80A, 10V

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

214W Tc

JESD-30 Code :

R-PSFM-T3

Qualification Status :

Not Qualified

JEDEC-95 Code :

TO-220AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Avalanche Energy Rating (Eas) :

448 mJ

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Published :

2011

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

60V

Surface Mount :

No

Drain Current-Max (Abs) (ID) :

80A

Vgs(th) (Max) @ Id :

4V @ 150μA

Series :

OptiMOS™

Gate Charge (Qg) (Max) @ Vgs :

93nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

3500pF @ 30V

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

FET Type :

N-Channel

Transistor Application :

SWITCHING

Number of Elements :

1

Additional Feature :

AVALANCHE RATED