IPP072N10N3GHKSA1
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- Mfr.Part #
- IPP072N10N3GHKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 80A TO220-3
- Stock
- 48,201
- In Stock ：
- 48,201
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss) :
- 100V
- Turn On Delay Time :
- 19 ns
- Vgs(th) (Max) @ Id :
- 3.5V @ 90µA
- Number of Pins :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 68nC @ 10V
- Max Operating Temperature :
- 175°C
- Vgs (Max) :
- ±20V
- RoHS Status :
- RoHS Compliant
- FET Type :
- N-Channel
- Rise Time :
- 37ns
- Input Capacitance :
- 4.91nF
- Fall Time (Typ) :
- 9 ns
- Supplier Device Package :
- PG-TO220-3
- Packaging :
- Tube
- Mount :
- Through Hole
- Mounting Type :
- Through Hole
- Package / Case :
- TO-220-3
- Rds On (Max) @ Id, Vgs :
- 7.2mOhm @ 80A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 4910pF @ 50V
- Min Operating Temperature :
- -55°C
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Drain to Source Breakdown Voltage :
- 80V
- Operating Temperature :
- -55°C~175°C TJ
- Series :
- OptiMOS™
- Turn-Off Delay Time :
- 37 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On Max :
- 7.2 mΩ
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Radiation Hardening :
- No
- Continuous Drain Current (ID) :
- 80A
- Drain to Source Resistance :
- 7.2mOhm
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation-Max :
- 150W Tc
- Datasheets
- IPP072N10N3GHKSA1
N-Channel Tube 7.2mOhm @ 80A, 10V ±20V 4910pF @ 50V 68nC @ 10V 100V TO-220-3
IPP072N10N3GHKSA1 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 4910pF @ 50V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 80A amps.In this device, the drain-source breakdown voltage is 80V and VGS=80V, so the drain-source breakdown voltage is 80V in this case.It is [37 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 7.2mOhm.A turn-on delay time of 19 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 100V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (6V 10V).
IPP072N10N3GHKSA1 Features
a continuous drain current (ID) of 80A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 37 ns
single MOSFETs transistor is 7.2mOhm
a 100V drain to source voltage (Vdss)
IPP072N10N3GHKSA1 Applications
There are a lot of Infineon Technologies
IPP072N10N3GHKSA1 applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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