IPP06N03LA

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

225 mJ

Number of Elements :

1

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 5V

Turn-Off Delay Time :

30 ns

Operating Mode :

ENHANCEMENT MODE

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

25V

Published :

2003

Input Capacitance (Ciss) (Max) @ Vds :

2653pF @ 15V

Rds On (Max) @ Id, Vgs :

6.2m Ω @ 30A, 10V

Packaging :

Tube

Additional Feature :

LOGIC LEVEL COMPATIBLE

Continuous Drain Current (ID) :

50A

Number of Pins :

3

Current Rating :

50A

Power Dissipation-Max :

83W Tc

Current - Continuous Drain (Id) @ 25°C :

50A Tc

Mount :

Through Hole

Vgs(th) (Max) @ Id :

2V @ 40µA

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Power Dissipation :

83W

Voltage - Rated DC :

25V

Fall Time (Typ) :

4.4 ns

Series :

OptiMOS™

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

FET Type :

N-Channel

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Element Configuration :

Single

Mounting Type :

Through Hole

Rise Time :

30ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.0099Ohm

Number of Terminations :

3