IPP062NE7N3G
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- Mfr.Part #
- IPP062NE7N3G
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IPP062NE7 - 12V-300V N-CHANNEL P
- Stock
- 42,819
- In Stock ：
- 42,819
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Gate to Source Voltage (Vgs) :
- 20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Halogen Free :
- Halogen Free
- JESD-30 Code :
- R-PSFM-T3
- Package / Case :
- TO-220-3
- Power Dissipation-Max :
- 136W Tc
- Vgs(th) (Max) @ Id :
- 3.8V @ 70μA
- Turn On Delay Time :
- 11 ns
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 24 ns
- Power Dissipation :
- 136W
- Radiation Hardening :
- No
- Series :
- OptiMOS™
- Factory Lead Time :
- 13 Weeks
- Max Dual Supply Voltage :
- 75V
- Number of Elements :
- 1
- Pulsed Drain Current-Max (IDM) :
- 320A
- Drain-source On Resistance-Max :
- 0.0062Ohm
- Terminal Finish :
- Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±20V
- Terminal Position :
- Single
- Number of Terminations :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 3
- Rise Time :
- 48ns
- Published :
- 2011
- Gate Charge (Qg) (Max) @ Vgs :
- 55nC @ 10V
- Transistor Element Material :
- SILICON
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- JEDEC-95 Code :
- TO-220AB
- Continuous Drain Current (ID) :
- 80A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Fall Time (Typ) :
- 10 ns
- Operating Temperature :
- -55°C~175°C TJ
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 3840pF @ 37.5V
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 6.2m Ω @ 73A, 10V
- Datasheets
- IPP062NE7N3G
N-Channel Tube 6.2m Ω @ 73A, 10V ±20V 3840pF @ 37.5V 55nC @ 10V TO-220-3
IPP062NE7N3GXKSA1 Overview
A device's maximum input capacitance is 3840pF @ 37.5V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 80A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 24 ns.Its maximum pulsed drain current is 320A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Powered by 75V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.
IPP062NE7N3GXKSA1 Features
a continuous drain current (ID) of 80A
the turn-off delay time is 24 ns
based on its rated peak drain current 320A.
IPP062NE7N3GXKSA1 Applications
There are a lot of Infineon Technologies
IPP062NE7N3GXKSA1 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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