IPP060N06NAKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2008

Terminal Position :

Single

Packaging :

Tube

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

2.8V @ 36μA

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

6m Ω @ 45A, 10V

Series :

OptiMOS™

Current - Continuous Drain (Id) @ 25°C :

17A Ta 45A Tc

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 30V

ECCN Code :

EAR99

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

60 mJ

Drain to Source Breakdown Voltage :

60V

Fall Time (Typ) :

7 ns

Gate to Source Voltage (Vgs) :

20V

Pin Count :

3

Continuous Drain Current (ID) :

45A

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Rise Time :

12ns

Power Dissipation :

83W

FET Type :

N-Channel

Number of Terminations :

3

Factory Lead Time :

13 Weeks

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Mounting Type :

Through Hole

Lead Free :

Contains Lead

Turn-Off Delay Time :

20 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB

Configuration :

SINGLE WITH BUILT-IN DIODE

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Power Dissipation-Max :

3W Ta 83W Tc

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Dual Supply Voltage :

60V

Mount :

Through Hole

Pbfree Code :

No

Number of Elements :

1

Halogen Free :

Halogen Free

Drain-source On Resistance-Max :

0.006Ohm