IPP05N03LA

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.0081Ohm

Fall Time (Typ) :

4.6 ns

Input Capacitance (Ciss) (Max) @ Vds :

3110pF @ 15V

Voltage - Rated DC :

25V

Pin Count :

3

Additional Feature :

LOGIC LEVEL COMPATIBLE

Continuous Drain Current (ID) :

80A

Current Rating :

80A

Rds On (Max) @ Id, Vgs :

4.9m Ω @ 55A, 10V

Mounting Type :

Through Hole

Power Dissipation :

94W

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Pulsed Drain Current-Max (IDM) :

385A

Drain to Source Breakdown Voltage :

25V

Operating Mode :

ENHANCEMENT MODE

Series :

OptiMOS™

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

JESD-30 Code :

R-PSFM-T3

RoHS Status :

RoHS Compliant

Number of Terminations :

3

Power Dissipation-Max :

94W Tc

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 5V

Avalanche Energy Rating (Eas) :

190 mJ

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Terminal Finish :

MATTE TIN

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Qualification Status :

Not Qualified

Turn-Off Delay Time :

32 ns

Rise Time :

27ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Vgs (Max) :

±20V

Gate to Source Voltage (Vgs) :

20V

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Published :

2003

Transistor Element Material :

SILICON

Mount :

Through Hole

Packaging :

Tube

Vgs(th) (Max) @ Id :

2V @ 50μA