IPP05CN10NGXK

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

100V

Input Capacitance (Ciss) (Max) @ Vds :

12000pF @ 50V

Gate to Source Voltage (Vgs) :

20V

Avalanche Energy Rating (Eas) :

826 mJ

Turn-Off Delay Time :

64 ns

ECCN Code :

EAR99

Number of Terminations :

3

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

100A

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

400A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

OptiMOS™

Published :

2008

Current Rating :

100A

Turn On Delay Time :

28 ns

Fall Time (Typ) :

21 ns

Terminal Position :

Single

Packaging :

Tube

FET Type :

N-Channel

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation :

300W

Qualification Status :

Not Qualified

Terminal Finish :

Tin (Sn)

Halogen Free :

Halogen Free

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Factory Lead Time :

13 Weeks

Gate Charge (Qg) (Max) @ Vgs :

181nC @ 10V

Drain-source On Resistance-Max :

0.0054Ohm

Mount :

Through Hole

JEDEC-95 Code :

TO-220AB

Package / Case :

TO-220-3

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Max Dual Supply Voltage :

100V

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

5.4m Ω @ 100A, 10V

Power Dissipation-Max :

300W Tc

Pbfree Code :

yes

Pin Count :

3

Mounting Type :

Through Hole

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Configuration :

SINGLE WITH BUILT-IN DIODE

Rise Time :

42ns