IPP04N03LA

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Number of Elements :

1

Power Dissipation :

107W

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

385A

Fall Time (Typ) :

5.4 ns

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 55A, 10V

Lead Free :

Contains Lead

Mounting Type :

Through Hole

Continuous Drain Current (ID) :

80A

Operating Temperature :

-55°C~175°C TJ

Voltage - Rated DC :

25V

Packaging :

Tube

ECCN Code :

EAR99

Current Rating :

80A

Additional Feature :

LOGIC LEVEL COMPATIBLE

Number of Terminations :

3

Drain to Source Breakdown Voltage :

25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

OptiMOS™

Turn-Off Delay Time :

38 ns

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 5V

Terminal Finish :

MATTE TIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Vgs (Max) :

±20V

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

2V @ 60μA

Drain-source On Resistance-Max :

0.0067Ohm

Power Dissipation-Max :

107W Tc

Input Capacitance (Ciss) (Max) @ Vds :

3877pF @ 15V

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

JESD-609 Code :

e3

FET Type :

N-Channel

Published :

2003

Avalanche Energy Rating (Eas) :

290 mJ

JESD-30 Code :

R-PSFM-T3

Rise Time :

4.5ns

JEDEC-95 Code :

TO-220AB

RoHS Status :

RoHS Compliant