IPP045N10N3GXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

59ns

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 100A, 10V

RoHS Status :

ROHS3 Compliant

Number of Pins :

3

Vgs(th) (Max) @ Id :

3.5V @ 150μA

Series :

OptiMOS™

Turn On Delay Time :

27 ns

Gate Charge (Qg) (Max) @ Vgs :

117nC @ 10V

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

JESD-609 Code :

e3

Drain-source On Resistance-Max :

0.0045ohm

Terminal Position :

Single

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

Tin (Sn)

Fall Time (Typ) :

14 ns

Pulsed Drain Current-Max (IDM) :

400A

Turn-Off Delay Time :

48 ns

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Continuous Drain Current (ID) :

100A

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

8410pF @ 50V

Power Dissipation :

214W

Halogen Free :

Halogen Free

ECCN Code :

EAR99

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Package / Case :

TO-220-3

Number of Terminations :

3

Pbfree Code :

yes

Published :

2008

Transistor Application :

SWITCHING

Max Dual Supply Voltage :

100V

JEDEC-95 Code :

TO-220AB

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Radiation Hardening :

No

Factory Lead Time :

13 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

214W Tc

FET Type :

N-Channel

Mounting Type :

Through Hole

Mount :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE