IPP042N03LGXKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Height :

15.95mm

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

79W Tc

Max Dual Supply Voltage :

30V

Rise Time :

5.6ns

Power Dissipation :

79W

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

70A

Element Configuration :

Single

Drain-source On Resistance-Max :

0.006Ohm

Pbfree Code :

yes

Fall Time (Typ) :

4.4 ns

Drain to Source Breakdown Voltage :

30V

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Factory Lead Time :

13 Weeks

Number of Elements :

1

Package / Case :

TO-220-3

Length :

10.36mm

Published :

2008

FET Type :

N-Channel

Additional Feature :

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

3900pF @ 15V

Number of Terminations :

3

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Threshold Voltage :

1V

Turn On Delay Time :

7.4 ns

Width :

4.57mm

Series :

OptiMOS™

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

4.2m Ω @ 30A, 10V

Turn-Off Delay Time :

28 ns

Pulsed Drain Current-Max (IDM) :

400A

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Number of Pins :

3

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Pin Count :

3

Mount :

Through Hole

Halogen Free :

Halogen Free

Terminal Finish :

Tin (Sn)

Packaging :

Tube

Avalanche Energy Rating (Eas) :

60 mJ

Gate to Source Voltage (Vgs) :

20V