IPP040N06NAKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

13 Weeks

Vgs(th) (Max) @ Id :

2.8V @ 50μA

Gate to Source Voltage (Vgs) :

20V

Pin Count :

3

Drain Current-Max (Abs) (ID) :

20A

Gate Charge (Qg) (Max) @ Vgs :

38nC @ 10V

Max Dual Supply Voltage :

60V

Power Dissipation :

107W

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Rise Time :

16ns

Surface Mount :

No

Published :

2008

Input Capacitance (Ciss) (Max) @ Vds :

2700pF @ 30V

Drain to Source Breakdown Voltage :

60V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Mounting Type :

Through Hole

Package / Case :

TO-220-3

Avalanche Energy Rating (Eas) :

70 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

80A

JESD-609 Code :

e3

Number of Elements :

1

Packaging :

Tube

Fall Time (Typ) :

9 ns

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-220AB

ECCN Code :

EAR99

Halogen Free :

Halogen Free

Turn-Off Delay Time :

30 ns

Rds On (Max) @ Id, Vgs :

4m Ω @ 80A, 10V

RoHS Status :

ROHS3 Compliant

Pbfree Code :

No

Element Configuration :

Single

Drain-source On Resistance-Max :

0.004ohm

Pulsed Drain Current-Max (IDM) :

320A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Number of Terminations :

3

Lead Free :

Contains Lead

Power Dissipation-Max :

3W Ta 107W Tc

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

20A Ta 80A Tc

HTS Code :

8541.29.00.95

JESD-30 Code :

R-PSFM-T3

Series :

OptiMOS™

Transistor Element Material :

SILICON