IPP03N03LA

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Vgs(th) (Max) @ Id :

2V @ 100µA

Gate Charge (Qg) (Max) @ Vgs :

57nC @ 5V

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

80A Tc

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSFM-T3

Qualification Status :

Not Qualified

Transistor Application :

SWITCHING

Voltage - Rated DC :

25V

JEDEC-95 Code :

TO-220AB

Packaging :

Tape and Box (TB)

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.0044Ohm

Series :

OptiMOS™

Element Configuration :

Single

Current Rating :

80A

Additional Feature :

LOGIC LEVEL COMPATIBLE

Package / Case :

TO-220-3

Mount :

Through Hole

Avalanche Energy Rating (Eas) :

960 mJ

Power Dissipation :

150W

Pulsed Drain Current-Max (IDM) :

385A

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

3m Ω @ 55A, 10V

Drain to Source Breakdown Voltage :

25V

Continuous Drain Current (ID) :

80A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

MATTE TIN

Number of Terminations :

3

ECCN Code :

EAR99

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

7027pF @ 15V

Vgs (Max) :

±20V

Mounting Type :

Through Hole

RoHS Status :

RoHS Compliant

Turn-Off Delay Time :

45 ns

Fall Time (Typ) :

7.5 ns

Power Dissipation-Max :

150W Tc

Published :

2003

Rise Time :

8.5ns