IPP037N08N3GHKSA1
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- Mfr.Part #
- IPP037N08N3GHKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 100A TO220-3
- Stock
- 33,785
- In Stock ：
- 33,785
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mounting Type :
- Through Hole
- Supplier Device Package :
- PG-TO220-3
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Radiation Hardening :
- No
- FET Type :
- N-Channel
- Mount :
- Through Hole
- Min Operating Temperature :
- -55°C
- RoHS Status :
- RoHS Compliant
- Vgs(th) (Max) @ Id :
- 3.5V @ 155μA
- Drain to Source Voltage (Vdss) :
- 80V
- Input Capacitance :
- 8.11nF
- Turn-Off Delay Time :
- 45 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 23 ns
- Rds On Max :
- 3.75 mΩ
- Gate to Source Voltage (Vgs) :
- 20V
- Package / Case :
- TO-220-3
- Operating Temperature :
- -55°C~175°C TJ
- Published :
- 2008
- Power Dissipation-Max :
- 214W Tc
- Series :
- OptiMOS™
- Continuous Drain Current (ID) :
- 100A
- Max Operating Temperature :
- 175°C
- Rds On (Max) @ Id, Vgs :
- 3.75mOhm @ 100A, 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 8110pF @ 40V
- Fall Time (Typ) :
- 14 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 117nC @ 10V
- Power Dissipation :
- 214W
- Rise Time :
- 79ns
- Vgs (Max) :
- ±20V
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 100A Tc
- Packaging :
- Tube
- Datasheets
- IPP037N08N3GHKSA1
N-Channel Tube 3.75mOhm @ 100A, 10V ±20V 8110pF @ 40V 117nC @ 10V 80V TO-220-3
IPP037N08N3GHKSA1 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8110pF @ 40V.This device has a continuous drain current (ID) of [100A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 45 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 23 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 80V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (6V 10V).
IPP037N08N3GHKSA1 Features
a continuous drain current (ID) of 100A
the turn-off delay time is 45 ns
a 80V drain to source voltage (Vdss)
IPP037N08N3GHKSA1 Applications
There are a lot of Infineon Technologies
IPP037N08N3GHKSA1 applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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