IPP034N03LGXKSA1
- Mfr.Part #
- IPP034N03LGXKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 80A TO220-3
- Stock
- 21,357
- In Stock :
- 21,357
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Terminal Finish :
- Tin (Sn)
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~175°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 13 Weeks
- Published :
- 2008
- Max Dual Supply Voltage :
- 30V
- Series :
- OptiMOS™
- JEDEC-95 Code :
- TO-220AB
- Rds On (Max) @ Id, Vgs :
- 3.4m Ω @ 30A, 10V
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 80A
- Current - Continuous Drain (Id) @ 25°C :
- 80A Tc
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Package / Case :
- TO-220-3
- Number of Pins :
- 3
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Element Material :
- SILICON
- Qualification Status :
- Not Qualified
- Vgs (Max) :
- ±20V
- REACH SVHC :
- No SVHC
- Packaging :
- Tube
- Mount :
- Through Hole
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Turn On Delay Time :
- 9.2 ns
- Pulsed Drain Current-Max (IDM) :
- 400A
- Power Dissipation-Max :
- 94W Tc
- Turn-Off Delay Time :
- 35 ns
- Halogen Free :
- Halogen Free
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Additional Feature :
- AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
- Terminal Position :
- Single
- Drain-source On Resistance-Max :
- 0.0047Ohm
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Avalanche Energy Rating (Eas) :
- 70 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 51nC @ 10V
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 5300pF @ 15V
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- Rise Time :
- 6.4ns
- JESD-609 Code :
- e3
- Fall Time (Typ) :
- 5.4 ns
- Power Dissipation :
- 94W
- Vgs(th) (Max) @ Id :
- 2.2V @ 250µA
- Datasheets
- IPP034N03LGXKSA1

N-Channel Tube 3.4m Ω @ 30A, 10V ±20V 5300pF @ 15V 51nC @ 10V TO-220-3
IPP034N03LGXKSA1 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 70 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 5300pF @ 15V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 80A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 35 ns.Peak drain current is 400A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9.2 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.In addition to 30V, it supports dual voltages up to the maximum.Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
IPP034N03LGXKSA1 Features
the avalanche energy rating (Eas) is 70 mJ
a continuous drain current (ID) of 80A
the turn-off delay time is 35 ns
based on its rated peak drain current 400A.
IPP034N03LGXKSA1 Applications
There are a lot of Infineon Technologies
IPP034N03LGXKSA1 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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