IPP034N03LGHKSA1

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Mfr.Part #
IPP034N03LGHKSA1
Manufacturer
Infineon Technologies
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 30V 80A TO220-3
Stock
10,801
In Stock :
10,801

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Mounting Type :
Through Hole
Input Capacitance :
5.3nF
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Input Capacitance (Ciss) (Max) @ Vds :
5300pF @ 15V
Turn-Off Delay Time :
35 ns
Gate to Source Voltage (Vgs) :
20V
Packaging :
Tube
Min Operating Temperature :
-55°C
Current - Continuous Drain (Id) @ 25°C :
80A Tc
Lead Free :
Lead Free
Published :
2007
Power Dissipation :
94W
Power Dissipation-Max :
94W Tc
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Drain to Source Resistance :
3.4mOhm
Vgs(th) (Max) @ Id :
2.2V @ 250µA
Rise Time :
6.4ns
Fall Time (Typ) :
5.4 ns
Series :
OptiMOS™
Rds On Max :
3.4 mΩ
Turn On Delay Time :
9.2 ns
Package / Case :
TO-220-3
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
3.4mOhm @ 30A, 10V
RoHS Status :
RoHS Compliant
Supplier Device Package :
PG-TO220-3-1
Vgs (Max) :
±20V
Drain to Source Voltage (Vdss) :
30V
Operating Temperature :
-55°C~175°C TJ
Continuous Drain Current (ID) :
80A
Max Operating Temperature :
175°C
Gate Charge (Qg) (Max) @ Vgs :
25nC @ 4.5V
Number of Elements :
1
Mount :
Through Hole
Datasheets
IPP034N03LGHKSA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPP034N03LGHKSA1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Operating Temperature:-55°C~175°C TJ, IPP034N03LGHKSA1 pinout, IPP034N03LGHKSA1 datasheet PDF, IPP034N03LGHKSA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPP034N03LGHKSA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPP034N03LGHKSA1


N-Channel Tube 3.4mOhm @ 30A, 10V ±20V 5300pF @ 15V 25nC @ 4.5V 30V TO-220-3

IPP034N03LGHKSA1 Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 5300pF @ 15V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 35 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 3.4mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 9.2 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

IPP034N03LGHKSA1 Features


a continuous drain current (ID) of 80A
the turn-off delay time is 35 ns
single MOSFETs transistor is 3.4mOhm
a 30V drain to source voltage (Vdss)


IPP034N03LGHKSA1 Applications


There are a lot of Infineon Technologies
IPP034N03LGHKSA1 applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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