IPP030N10N5AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2013

Factory Lead Time :

13 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

10300pF @ 50V

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

100V

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

139nC @ 10V

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Mount :

Through Hole

Number of Terminations :

3

Package / Case :

TO-220-3

Rds On (Max) @ Id, Vgs :

3m Ω @ 100A, 10V

Halogen Free :

Halogen Free

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Turn-Off Delay Time :

52 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

JESD-30 Code :

R-PSFM-T3

Gate to Source Voltage (Vgs) :

20V

Case Connection :

DRAIN

Mounting Type :

Through Hole

Number of Channels :

1

RoHS Status :

ROHS3 Compliant

Weight :

6.000006g

Number of Elements :

1

JEDEC-95 Code :

TO-220AB

Continuous Drain Current (ID) :

120A

Series :

OptiMOS™

Max Dual Supply Voltage :

100V

Lead Free :

Contains Lead

Power Dissipation-Max :

250W Tc

Turn On Delay Time :

25 ns

Pulsed Drain Current-Max (IDM) :

480A

Vgs(th) (Max) @ Id :

3.8V @ 184μA

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Element Configuration :

Single

Fall Time (Typ) :

17 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.003Ohm

Rise Time :

15ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tube