IPP029N06NAKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.0029Ohm

Current - Continuous Drain (Id) @ 25°C :

24A Ta 100A Tc

Gate Charge (Qg) (Max) @ Vgs :

56nC @ 10V

Power Dissipation-Max :

3W Ta 136W Tc

JESD-30 Code :

R-PSFM-T3

FET Type :

N-Channel

Pulsed Drain Current-Max (IDM) :

400A

JEDEC-95 Code :

TO-220AB

Mounting Type :

Through Hole

DS Breakdown Voltage-Min :

60V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Elements :

1

Published :

2008

Operating Temperature :

-55°C~175°C TJ

Transistor Application :

SWITCHING

Pbfree Code :

No

Terminal Position :

Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Surface Mount :

No

Pin Count :

3

Rds On (Max) @ Id, Vgs :

2.9m Ω @ 100A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

4100pF @ 30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

2.8V @ 75μA

Series :

OptiMOS™

Drain to Source Voltage (Vdss) :

60V

Packaging :

Tube

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Avalanche Energy Rating (Eas) :

110 mJ

JESD-609 Code :

e3

Factory Lead Time :

13 Weeks

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Package / Case :

TO-220-3

Drain Current-Max (Abs) (ID) :

24A

ECCN Code :

EAR99

Terminal Finish :

Tin (Sn)

Number of Terminations :

3