IPP027N08N5AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

46 ns

Terminal Finish :

Tin (Sn)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

80V

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

374 mJ

Vgs(th) (Max) @ Id :

3.8V @ 154μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JEDEC-95 Code :

TO-220AB

Mounting Type :

Through Hole

Reach Compliance Code :

not_compliant

Transistor Application :

SWITCHING

Halogen Free :

Halogen Free

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

15 ns

Rds On (Max) @ Id, Vgs :

2.7m Ω @ 100A, 10V

Continuous Drain Current (ID) :

120A

JESD-30 Code :

R-PSFM-T3

Published :

2013

Lead Free :

Contains Lead

Mount :

Through Hole

Case Connection :

DRAIN

Number of Channels :

1

Input Capacitance (Ciss) (Max) @ Vds :

8970pF @ 40V

JESD-609 Code :

e3

FET Type :

N-Channel

Weight :

6.000006g

Max Dual Supply Voltage :

80V

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

Drain-source On Resistance-Max :

0.0027Ohm

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

480A

Turn On Delay Time :

22 ns

Power Dissipation-Max :

214W Tc

Gate Charge (Qg) (Max) @ Vgs :

123nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Element Configuration :

Single

Rise Time :

14ns

Package / Case :

TO-220-3

Factory Lead Time :

13 Weeks

Series :

OptiMOS™