IPP024N06N3GHKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

23000pF @ 30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Rds On (Max) @ Id, Vgs :

2.4mOhm @ 100A, 10V

Power Dissipation :

250W

Drain to Source Voltage (Vdss) :

60V

Mounting Type :

Through Hole

Power Dissipation-Max :

250W Tc

Current - Continuous Drain (Id) @ 25°C :

120A Tc

RoHS Status :

RoHS Compliant

Min Operating Temperature :

-55°C

Packaging :

Tube

Supplier Device Package :

PG-TO220-3

Rds On Max :

2.4 mΩ

Continuous Drain Current (ID) :

120A

Published :

2011

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

275nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Max Operating Temperature :

175°C

Series :

OptiMOS™

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

4V @ 196µA

Input Capacitance :

23nF

Vgs (Max) :

±20V