IPP023NE7N3G

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

3.8V @ 273μA

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

75V

JESD-30 Code :

R-PSFM-T3

FET Type :

N-Channel

DS Breakdown Voltage-Min :

75V

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

300W Tc

Input Capacitance (Ciss) (Max) @ Vds :

14400pF @ 37.5V

Published :

2011

Number of Elements :

1

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-220AB

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.0023Ohm

Packaging :

Tube

Surface Mount :

No

Transistor Application :

SWITCHING

Terminal Position :

Single

ECCN Code :

EAR99

RoHS Status :

RoHS Compliant

Series :

OptiMOS™ 3

Pin Count :

3

Drain Current-Max (Abs) (ID) :

120A

Pulsed Drain Current-Max (IDM) :

480A

Package / Case :

TO-220-3

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

206nC @ 10V

Avalanche Energy Rating (Eas) :

1100 mJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

2.3m Ω @ 100A, 10V

Reach Compliance Code :

Compliant