IPP023N10N5AKSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

210nC @ 10V

Pulsed Drain Current-Max (IDM) :

480A

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-220-3

JESD-609 Code :

e3

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Mount :

Through Hole

Continuous Drain Current (ID) :

120A

Rise Time :

26ns

Lead Free :

Contains Lead

Input Capacitance (Ciss) (Max) @ Vds :

15600pF @ 50V

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Vgs(th) (Max) @ Id :

3.8V @ 270μA

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Halogen Free :

Halogen Free

Factory Lead Time :

13 Weeks

Case Connection :

DRAIN

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

100V

FET Type :

N-Channel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Turn-Off Delay Time :

77 ns

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Fall Time (Typ) :

29 ns

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

375W Tc

Threshold Voltage :

3V

Number of Pins :

3

Element Configuration :

Single

Packaging :

Tube

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

2.3m Ω @ 100A, 10V

Weight :

6.000006g

Series :

OptiMOS™

Avalanche Energy Rating (Eas) :

979 mJ

Pbfree Code :

yes

Max Dual Supply Voltage :

100V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Channels :

1

Turn On Delay Time :

33 ns

Reach Compliance Code :

not_compliant

Published :

2013

JEDEC-95 Code :

TO-220AB