IPN70R600P7SATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.6Ohm

Vgs(th) (Max) @ Id :

3.5V @ 90µA

Terminal Finish :

Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

Factory Lead Time :

18 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Series :

CoolMOS™ P7

FET Type :

N-Channel

DS Breakdown Voltage-Min :

700V

Rds On (Max) @ Id, Vgs :

600m Ω @ 1.8A, 10V

Package / Case :

TO-261-3

JESD-609 Code :

e3

Vgs (Max) :

±16V

Transistor Element Material :

SILICON

Number of Terminations :

3

RoHS Status :

ROHS3 Compliant

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Dual

Published :

2014

Power Dissipation-Max :

6.9W Tc

Operating Mode :

ENHANCEMENT MODE

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Number of Elements :

1

Transistor Application :

SWITCHING

JESD-30 Code :

R-PDSO-G3

Input Capacitance (Ciss) (Max) @ Vds :

364pF @ 400V

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

8.5A Tc

Reach Compliance Code :

not_compliant

Drain to Source Voltage (Vdss) :

700V

Operating Temperature :

-40°C~150°C TJ

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate Charge (Qg) (Max) @ Vgs :

10.5nC @ 10V

Case Connection :

DRAIN