IPN70R450P7SATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Package / Case :

TO-261-3

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Series :

CoolMOS™ P7

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

FET Type :

N-Channel

Factory Lead Time :

18 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Input Capacitance (Ciss) (Max) @ Vds :

424pF @ 400V

Operating Temperature :

-40°C~150°C TJ

Packaging :

Tape and Reel (TR)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Dual

Vgs (Max) :

±16V

Published :

2014

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

13.1nC @ 10V

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

700V

Drain-source On Resistance-Max :

0.45Ohm

Rds On (Max) @ Id, Vgs :

450m Ω @ 2.3A, 10V

JESD-30 Code :

R-PDSO-G3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

3

Reach Compliance Code :

not_compliant

Power Dissipation-Max :

7.1W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

DS Breakdown Voltage-Min :

700V

Vgs(th) (Max) @ Id :

3.5V @ 120μA

Case Connection :

DRAIN