IPN70R1K4P7SATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

158pF @ 400V

Packaging :

Tape and Reel (TR)

DS Breakdown Voltage-Min :

700V

Case Connection :

DRAIN

Series :

CoolMOS™ P7

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3.5V @ 40μA

Package / Case :

TO-261-3

Rds On (Max) @ Id, Vgs :

1.4 Ω @ 700mA, 10V

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-40°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

4.7nC @ 10V

Mounting Type :

Surface Mount

Vgs (Max) :

±16V

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

700V

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Number of Terminations :

3

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Factory Lead Time :

18 Weeks

JESD-30 Code :

R-PDSO-G3

Terminal Position :

Dual

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Power Dissipation-Max :

6.2W Tc

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Published :

2014

Surface Mount :

yes