IPN70R2K1CEATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

3.5V @ 70μA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

700V

Factory Lead Time :

18 Weeks

Terminal Finish :

Tin (Sn)

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Surface Mount

FET Type :

N-Channel

Terminal Form :

Gull wing

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

2.1 Ω @ 1A, 10V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Transistor Application :

SWITCHING

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Package / Case :

SOT-223-3

JESD-30 Code :

R-PDSO-G3

Drain to Source Voltage (Vdss) :

750V

Power Dissipation-Max :

5W Tc

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-40°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

163pF @ 100V

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Reach Compliance Code :

not_compliant

Case Connection :

DRAIN

Published :

2014

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

7.8nC @ 10V