IPN65R1K5CEATMA1

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Mfr.Part #
IPN65R1K5CEATMA1
Manufacturer
Infineon Technologies
Package / Case
TO-261-3
Datasheet
Download
Description
MOSFET N-CH 650V 5.2A SOT223
Stock
43,200
In Stock :
43,200

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Drain to Source Voltage (Vdss) :
650V
Operating Temperature :
-40°C~150°C TJ
Terminal Finish :
Tin (Sn)
Vgs(th) (Max) @ Id :
3.5V @ 100µA
Drive Voltage (Max Rds On,Min Rds On) :
10V
ECCN Code :
EAR99
Rds On (Max) @ Id, Vgs :
1.5 Ω @ 1A, 10V
Packaging :
Tape and Reel (TR)
Mounting Type :
Surface Mount
JESD-609 Code :
e3
Vgs (Max) :
±20V
RoHS Status :
ROHS3 Compliant
Package / Case :
TO-261-3
Published :
2013
Input Capacitance (Ciss) (Max) @ Vds :
225pF @ 100V
Power Dissipation-Max :
5W Tc
Number of Pins :
3
Threshold Voltage :
3V
Reach Compliance Code :
not_compliant
Continuous Drain Current (ID) :
5.2A
FET Type :
N-Channel
REACH SVHC :
No SVHC
Series :
CoolMOS™ CE
Factory Lead Time :
18 Weeks
Gate Charge (Qg) (Max) @ Vgs :
10.5nC @ 10V
Moisture Sensitivity Level (MSL) :
3 (168 Hours)
Current - Continuous Drain (Id) @ 25°C :
5.2A Tc
Pbfree Code :
yes
Datasheets
IPN65R1K5CEATMA1
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IPN65R1K5CEATMA1 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-40°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:TO-261-3, Number of Pins:3, IPN65R1K5CEATMA1 pinout, IPN65R1K5CEATMA1 datasheet PDF, IPN65R1K5CEATMA1 amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IPN65R1K5CEATMA1 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IPN65R1K5CEATMA1


N-Channel Tape & Reel (TR) 1.5 Ω @ 1A, 10V ±20V 225pF @ 100V 10.5nC @ 10V 650V TO-261-3

IPN65R1K5CEATMA1 Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 225pF @ 100V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 5.2A amps.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 3V.To operate this transistor, you will need a 650V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IPN65R1K5CEATMA1 Features


a continuous drain current (ID) of 5.2A
a threshold voltage of 3V
a 650V drain to source voltage (Vdss)


IPN65R1K5CEATMA1 Applications


There are a lot of Infineon Technologies
IPN65R1K5CEATMA1 applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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