IPN60R3K4CEATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Current - Continuous Drain (Id) @ 25°C :

2.6A Tc

Gate Charge (Qg) (Max) @ Vgs :

4.6nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-40°C~150°C TJ

Number of Pins :

3

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

93pF @ 100V

Rds On (Max) @ Id, Vgs :

3.4 Ω @ 500mA, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Dual

Factory Lead Time :

18 Weeks

FET Feature :

Super Junction

Terminal Finish :

Tin (Sn)

Reach Compliance Code :

not_compliant

Package / Case :

SOT-223-3

Number of Terminations :

3

Published :

2013

Transistor Application :

SWITCHING

Power Dissipation-Max :

5W Tc

Case Connection :

DRAIN

JESD-609 Code :

e3

Pbfree Code :

yes

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Series :

CoolMOS™

DS Breakdown Voltage-Min :

600V

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Type :

N-Channel

Vgs(th) (Max) @ Id :

3.5V @ 40μA

Number of Elements :

1

Threshold Voltage :

3V

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

2.6A

Drain to Source Voltage (Vdss) :

600V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED