IPN60R2K1CEATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

FET Type :

N-Channel

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Operating Temperature :

-40°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Threshold Voltage :

3V

Package / Case :

SOT-223-3

Number of Elements :

1

DS Breakdown Voltage-Min :

600V

Terminal Form :

Gull wing

Case Connection :

DRAIN

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Series :

CoolMOS™

Continuous Drain Current (ID) :

3.7A

Gate Charge (Qg) (Max) @ Vgs :

6.7nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

3.7A Tc

Drain to Source Voltage (Vdss) :

600V

FET Feature :

Super Junction

Vgs(th) (Max) @ Id :

3.5V @ 60μA

Reach Compliance Code :

not_compliant

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

2.1 Ω @ 800mA, 10V

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 100V

Pbfree Code :

yes

Published :

2013

JESD-609 Code :

e3

Power Dissipation-Max :

5W Tc

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Number of Pins :

3

Terminal Position :

Dual

Factory Lead Time :

18 Weeks

Number of Terminations :

3