IPN60R360P7SATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Drain to Source Breakdown Voltage :

600V

Power Dissipation :

7W

Surface Mount :

yes

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

13nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

8 ns

FET Type :

N-Channel

Series :

CoolMOS™ P7

Number of Channels :

1

Terminal Position :

Dual

Power Dissipation-Max :

7W Tc

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Transistor Element Material :

SILICON

Factory Lead Time :

18 Weeks

Continuous Drain Current (ID) :

9A

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Max Junction Temperature (Tj) :

150°C

Vgs(th) (Max) @ Id :

4V @ 140μA

JESD-609 Code :

e3

Height :

1.8mm

Terminal Form :

Gull wing

Package / Case :

TO-261-3

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Case Connection :

DRAIN

Number of Terminations :

3

Turn-Off Delay Time :

42 ns

Reach Compliance Code :

not_compliant

Published :

2014

Rds On (Max) @ Id, Vgs :

360m Ω @ 2.7A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

555pF @ 400V

Operating Temperature :

-40°C~150°C TJ

Drain-source On Resistance-Max :

0.36ohm

JESD-30 Code :

R-PDSO-G3