IPL65R650C6SATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

650m Ω @ 2.1A, 10V

Halogen Free :

Halogen Free

Current - Continuous Drain (Id) @ 25°C :

6.7A Tc

Element Configuration :

Single

Published :

2008

Input Capacitance (Ciss) (Max) @ Vds :

440pF @ 100V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-30 Code :

R-PDSO-N5

Terminal Position :

Dual

FET Type :

N-Channel

Lead Free :

Contains Lead

Number of Channels :

1

Drain-source On Resistance-Max :

0.65Ohm

Turn On Delay Time :

12 ns

Pbfree Code :

yes

Transistor Element Material :

SILICON

Terminal Form :

NO LEAD

Rise Time :

9ns

Vgs(th) (Max) @ Id :

3.5V @ 210µA

Packaging :

Tape and Reel (TR)

Weight :

75.891673mg

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

6.7A

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Package / Case :

8-PowerTDFN

Series :

CoolMOS™ C6

Max Dual Supply Voltage :

650V

Fall Time (Typ) :

13 ns

Power Dissipation-Max :

56.8W Tc

Number of Pins :

8

Number of Terminations :

5

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 10V

Case Connection :

DRAIN

Turn-Off Delay Time :

80 ns

Operating Temperature :

-40°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Vgs (Max) :

±20V

Factory Lead Time :

18 Weeks

Reach Compliance Code :

not_compliant