IPL60R105P7AUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

650V

Published :

2014

FET Type :

N-Channel

JESD-30 Code :

S-PSSO-N4

Input Capacitance (Ciss) (Max) @ Vds :

1952pF @ 400V

Transistor Element Material :

SILICON

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

105m Ω @ 10.5A, 10V

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Operating Temperature :

-40°C~150°C TJ

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

105 mJ

Terminal Form :

NO LEAD

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±20V

Reach Compliance Code :

not_compliant

Pulsed Drain Current-Max (IDM) :

100A

Power Dissipation-Max :

137W Tc

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

DS Breakdown Voltage-Min :

600V

Vgs(th) (Max) @ Id :

4V @ 530μA

Number of Elements :

1

Series :

CoolMOS™ P7

Package / Case :

4-PowerTSFN

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Factory Lead Time :

18 Weeks

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

4

Drain-source On Resistance-Max :

0.105Ohm

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE