IPL60R065P7AUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

CoolMOS™ P7

Turn-Off Delay Time :

73 ns

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

41A Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Reach Compliance Code :

not_compliant

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

650V

Input Capacitance (Ciss) (Max) @ Vds :

2895pF @ 400V

Number of Elements :

1

Terminal Position :

Single

Number of Channels :

1

Power Dissipation-Max :

201W Tc

Turn On Delay Time :

16 ns

FET Type :

N-Channel

Mounting Type :

Surface Mount

Package / Case :

4-PowerTSFN

Published :

2014

Terminal Finish :

Tin (Sn)

Number of Terminations :

4

Terminal Form :

NO LEAD

Operating Mode :

ENHANCEMENT MODE

Height :

1.1mm

Factory Lead Time :

18 Weeks

Max Junction Temperature (Tj) :

150°C

Gate Charge (Qg) (Max) @ Vgs :

67nC @ 10V

Operating Temperature :

-40°C~150°C TJ

Vgs(th) (Max) @ Id :

4V @ 800μA

Drain to Source Breakdown Voltage :

600V

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

2A (4 Weeks)

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

41A

Rds On (Max) @ Id, Vgs :

65m Ω @ 15.9A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Surface Mount :

yes

JESD-609 Code :

e3

Vgs (Max) :

±20V

Power Dissipation :

201W

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-30 Code :

S-PSSO-N4

Drain-source On Resistance-Max :

0.065Ohm