IPL60R075CFD7AUMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

600V

Pulsed Drain Current-Max (IDM) :

129A

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Gate Charge (Qg) (Max) @ Vgs :

67nC @ 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Factory Lead Time :

18 Weeks

Operating Temperature :

-40°C~150°C TJ

Surface Mount :

yes

JESD-30 Code :

S-PSSO-N4

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

650V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Number of Terminations :

4

Series :

CoolMOS™ CFD7

Published :

2014

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.075Ohm

Package / Case :

4-PowerTSFN

Number of Elements :

1

Terminal Form :

NO LEAD

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Case Connection :

DRAIN

Terminal Finish :

Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

2721pF @ 400V

FET Type :

N-Channel

Terminal Position :

Single

Avalanche Energy Rating (Eas) :

151 mJ

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

75m Ω @ 15.1A, 10V

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Reach Compliance Code :

not_compliant

Drain Current-Max (Abs) (ID) :

33A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4.5V @ 760μA

Power Dissipation-Max :

189W Tc