IPL65R340CFDAUMA1
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- Mfr.Part #
- IPL65R340CFDAUMA1
- Manufacturer
- Infineon Technologies
- Package / Case
- 4-PowerTSFN
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 10.9A THIN-PAK
- Stock
- 34,456
- In Stock ：
- 34,456
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1100pF @ 100V
- Drain to Source Breakdown Voltage :
- 650V
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Terminal Finish :
- Tin (Sn)
- Halogen Free :
- Halogen Free
- Turn-Off Delay Time :
- 45 ns
- Number of Pins :
- 4
- Rise Time :
- 7.5ns
- Current - Continuous Drain (Id) @ 25°C :
- 10.9A Tc
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 10.9A
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 41nC @ 10V
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Dual Supply Voltage :
- 650V
- Package / Case :
- 4-PowerTSFN
- Moisture Sensitivity Level (MSL) :
- 2A (4 Weeks)
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 104.2W Tc
- Factory Lead Time :
- 16 Weeks
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On (Max) @ Id, Vgs :
- 340m Ω @ 4.4A, 10V
- FET Type :
- N-Channel
- Turn On Delay Time :
- 11 ns
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -40°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 4.5V @ 400μA
- Mount :
- Surface Mount
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Number of Channels :
- 2
- Series :
- CoolMOS™
- Published :
- 2010
- Lead Free :
- Contains Lead
- Fall Time (Typ) :
- 7 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Reach Compliance Code :
- not_compliant
- Datasheets
- IPL65R340CFDAUMA1
N-Channel Tape & Reel (TR) 340m Ω @ 4.4A, 10V ±20V 1100pF @ 100V 41nC @ 10V 4-PowerTSFN
IPL65R340CFDAUMA1 Overview
A device's maximal input capacitance is 1100pF @ 100V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 10.9A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 650V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 45 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.By using 650V, it can supply the maximum voltage from two sources.This device reduces its overall power consumption by using drive voltage (10V).
IPL65R340CFDAUMA1 Features
a continuous drain current (ID) of 10.9A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 45 ns
IPL65R340CFDAUMA1 Applications
There are a lot of Infineon Technologies
IPL65R340CFDAUMA1 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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